激情内射亚洲一区二区三区-www国产精品内射老熟女-小蜜被两老头吸奶头在线观看-国产亚洲精品久久久久5区-国产播放隔着超薄丝袜进入

CN EN
Home
About Us
Newpros
New N150V SGT MOSFETs
New N150V SGT MOSFETs Back
PDF

Introduction Power over Ethernet Protocol (PoE) has been available for many years. A new standard IEEE 802.3bt was approved in 2018, which increases the maximum power that can be transmitted through twisted-pair Ethernet cables and encourages new PoE applications to pursue higher power density.Current power supply equipment (PSE) provides up to 100W of power and supports 8 different power levels;Power Device (PD) will be able to use up to 71W of power.Yangjie launched N150V serialized products for IEEE802.3af&at&bt.Using SGT technology, it has higher switching speeds and lower losses than traditional Trench MOS products.
Features 1、Using SGT technology, the product has low internal resistance and excellent switching characteristics
2、PDFN5060, SO-8, TO252, ITO220AB multiple packages are optional
3、Applicable to IEEE802.3af&at&bt protocol PD power supply
SPECIFICATION

YJD18G15A YJG15G15A YJG60G15HJ YJS05G15A

Related new products

Low VCE(sat)?3A?Bipolar?Transistor

650V Super Junction N-Channel MOSFET

Anti-reverse Rectifier Diodes for High-power Supplies

Micro-pattern Trenches IGBT for Servo Controller & Frequency Converter & Industrial Power Supply

GBU Package Extended 35A-50A High Current Series Products

SGT MOSFET for PV Microinverter

Six-unit IGBT Module for Servo Controller and Frequency Converter

Power Transistors for Energy storage,Industrial Control,Consumer Electronics,etc

New SiC MOSFET for Photovoltaic Energy Storage, OBC&Power Supply

DFN1006-3L Package Small Signal Device